2002. 9. 3 1/1 semiconductor technical data KTC9011S epitaxial planar npn transistor revision no : 0 high frequency application. hf, vhf band amplifier application. feature high power gain : gpe=29db(typ.) at f=10.7mhz. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 50 ma emitter current i e -50 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =1ma 54 - 198 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v transition frequency f t v ce =10v, i c =1ma, f=100mhz 100 - 400 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 - pf note : h fe classification f:54 80, g:72 108, h:97 146, i:132 198 h rank type name marking lot no. ba fe * p c : package mounted on 99.5% alumina (10 8 0.6 )
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